Free

LayTec’s 24th in-situ Seminar

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Online Event

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Program of the combined real-life and globally transmitted web-based event

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August 24, 2020

III-Nitride epitaxy – latest in-situ developments

08:00 - 10:00 am and 05:00 - 07:00 pm CEST, Session Chair: Oliver Schulz

08:00 - 08:10 am / 05:00 - 05:10 pm

Opening and Welcome by Thomas Zettler (LayTec)

08:10 - 08:35 am / 05:10 - 05:35 pm

Overview & update on in-situ metrology for power electronics (GaN/SiC, GaN/Si, SiC/SiC)

Iris Claussen (LayTec)

08:40 - 09:05 am / 05:40 - 06:05 pm

Tight in-situ control of AlGaN active layer growth conditions for high-frequency power electronics (AlGaN/GaN HFETs on SiC-4H)

Frank Brunner (FBH)

09:10 - 09:35 am / 06:10 - 06:35 pm

Latest advantages in wafer temperature sensing during MOCVD for UV-C LEDs on sapphire

Kolja Haberland (LayTec) and Arne Knauer (FBH)

09:40 - 10:05 am / 06:40 - 07:05 pm

In-situ metrology for sputtered III-Nitrides

Armin Dadgar (University of Magdeburg)

August 25th, 2020

III-As/P epitaxy – latest in-situ developments

08:00 - 10:00 am and 05:00 - 07:00 pm CEST, Session Chair: Kolja Haberland

08:00 - 08:10 am / 05:00 - 05:10 pm

Opening and Welcome by Thomas Zettler (LayTec)

08:10 - 08:35 am / 05:10 - 05:35 pm

In-situ metrology for VCSEL related processes

Christian Kaspari (LayTec)

08:40 - 09:05 am / 05:40 - 06:05 pm

Latest progress in in-situ metrology based SPC during manufacturing of GaAs based edge-emitting high-power lasers

Martin Zorn (Jenoptik)

09:10 - 09:35 am / 06:10 - 06:35 pm

Combining ex-situ and in-situ metrology for tight MOCVD process control of SESAM and laser devices

Markus Weyers (FBH)

09:40 – 10:05 am / 06:40 - 07:05 pm

MBE processes for advanced oxide semiconductor and III-V devices – on the combined use of EpiTT and band-edge wafer temperature sensing

Jaime Beltran (LayTec)

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